Helicity-dependent photocurrent in a (110) GaAs quantum well stack
ORAL
Abstract
There have been many reports on the circular photogalvanic effect (CPGE) in GaAs quantum wells. A recent theoretical study suggests that the CPGE can be governed by a quantum confinement-induced Berry phase effect that depends only on the quantum-well width and crystal orientation (J.E. Moore, Phys. Rev. Lett. 2010). We have measured the photocurrent in a (110)-oriented GaAs quantum well stack under illumination of circularly polarized THz radiation. We will report measurements of the helicity-driven photocurrent as a function of frequency, polarization, angle of incident, and temperature, and compare with theoretical predictions of the Berry phase contribution.
–
Authors
D.C. Schmadel
Department of Physics, University of Maryland (Physics-UMD)
M.-H. Kim
Department of Physics, University of Maryland (Physics-UMD)
CNAM-UMD
Center for Nanophysics and Advanced Materials(CNAM)-University of Maryland(UMD)
Andrei Sushkov
Department of Physics, University of Maryland (Physics-UMD)
University of Maryland
CNAM and MRSEC, Department of Physics, University of Maryland, USA
CNAM-UMD
Greg Jenkins
Department of Physics, University of Maryland (Physics-UMD)
CNAM-UMD
J.D. Koralek
Lawrence Berkeley National Lab (LBNL)
Joel Moore
University of California, Berkeley, and Lawrence Berkeley National Laboratory
UC Berkeley and Lawrence Berkeley National Laboratory
University of California Berkeley, and LBNL
UC Berkeley
J. Orenstein
University of California Berkeley, and LBNL
UC Berkeley and LBNL
UC Berkeley, LBNL
Yuzo Ohno
Research Institute of Electrical Communication, Tohoku University, Japan
Hideo Ohno
Research Institute of Electrical Communication, Tohoku University, Japan
Dennis Drew
Physics-UMD
CNAM-UMD
Department of Physics, University of Maryland, College Park, MD
