Strain-controlled band engineering and Self-doping in Ultrathin LaNiO3 films

ORAL

Abstract

We discover a unique self-doping carrier transition by strain-induced in LaNiO$_3$ ultra thin film. Transport properties evolving from compressive to tensile strains are similar to those of different hole-doping superconducting cuprates. DFT calculations show the changes in low-energy electronic band structure account for the charge transfer between O p and Ni d states. The results indicate that ultrathin films can be used to change the carrier concentration transition metal oxides without resorting to chemical substitution.

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Authors

  • X. Liu

    • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

  • E.J. Moon

    • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

  • J.M. Rondinelli

    • Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104

  • N. Prasai

    • Department of Physics, University of Miami, Coral Gables, Florida 33124

  • B.A. Gray

    • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

  • M. Kareev

    • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

  • J. Chakhalian

    • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

  • J.L. Cohn

    • Department of Physics, University of Miami, Coral Gables, Florida 33124