Epitaxial Growth of Topological Insulators on Hexagonal Boron Nitride

ORAL

Abstract

Topological insulators (TIs) have attracted much attention for exhibiting exotic, topologically-protected surface states consisting of massless Dirac fermions. Investigations on thin film TIs have primarily relied on those either grown by MBE or by mechanical exfoliation onto suitable target substrates. Taking a cue from the graphene community, hexagonal boron nitride (hBN) has proven to be an excellent insulating substrate since it is atomically flat with no surface dangling bonds. In this talk I will report on recent transport and scanning probe measurements on epitaxial thin films of bismuth selenide TI grown by MBE on hBN/SiOx.

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Authors

  • Christopher Gutierrez

    • Columbia University

  • Woo Chang Chung

    • Columbia University

  • Chockalingam Subbaiah

    • Columbia University

  • Matthew Brahlek

    • Rutgers University

  • Seongshik Oh

    • Rutgers University

  • Abhay Pasupathy

    • Columbia University