the effect of electron doping in TiO2 assessed by ARPES
ORAL
Abstract
The titanium oxide TiO2 has been object of extensive studies because of its suitability in many practical fields, ranging from photovoltaic applications, to catalysis, memristors, and others. As for many other transition metal oxides, great attention has been devoted to the impact on the electronic structure of different doping mechanisms, either extrinsic or due to the creation of oxygen vacancies. Here we report an angle-resolved photoemission (ARPES) work on TiO$_2$ single crystals and epitaxial films grown wIth the \textit{in situ} pulsed-laser-deposition (PLD) system available on beamline 7.0.1 at the Advanced Light Source. We show the evolution of the electronic structure as a function of the amount of oxygen vacancies induced by the photon beam.
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