Characterization of Er$^{+3}$:Y$_2$O$_3$ films made via Atomic Layer Deposition

Er$^{+3}$:Y$_2$O$_3$ thin films with spatially-controlled Er$^{+3}$ ion incorporation, were deposited on various substrates using Atomic Layer Deposition. By systematically varying the Erbium precursors used in the deposition of the films, a method to spatially control the Erbium has been realized. All films were polycrystalline as deposited and no appreciable change was detected after post-deposition annealing. Emission spectra for all precursors used show crystalline emission lines, similar to those grown via a melt process. Photoluminescent lifetimes up to 6.5ms have been recorded from these films, the largest to date in films deposited with Atomic Layer Deposition. Films have been characterized using XRD/GIXRD, UV-Vis spectroscopy, XAFS, RBS, HFS, SEM, TEM, and AFM. The results of these various measurements, and the influence on photoluminescent lifetime will be discussed.