Scanning tunneling microscopy of topological insulator Bi$_2$Te$_2$Se

ORAL

Abstract

Using scanning tunneling microscopy, we study a prototypical topological insulator Bi$_2$Te$_2$Se having suppressed bulk carrier density. Landau level states of its topological surface state remarkably exhibit hysteresis behavior, which shift in energy controllably with the limits of ramping bias, forming hysteresis loops thereafter. The observed hysteresis behavior is attributed to the interplay between a tip-induced gating effect and an impurity-generated random charging effect. This provides a new avenue to controlling the topological surface state.

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Authors

  • Yingshuang Fu

    • RIKEN Advanced Science Institute

  • Tetsuo Hanaguri

    • RIKEN Advanced Science Institute

  • Shuhei Yamamoto

    • Tokyo Institute of Technology

  • Kyushiro Igarashi

    • Tokyo Institute of Technology

  • Hidenori Takagi

    • RIKEN Advanced Science Institute, University of Tokyo

  • Takao Sasagawa

    • Tokyo Institute of Technology