Focus Session: Electron, Ion, and Exciton Transport in Nanostructures - Resistive Switching Phenomena
FOCUS · T20 ·
Presentations
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X-ray Irradiation Induced Colossal Resistance Change in Pt/TiO2/Pt cellss
ORAL
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Authors
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Seo Hyoung Chang
- Materials Science Division (MSD), Argonne National Laboratory (ANL)
- Materials Science Division, Argonne National Laboratory
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Jungho Kim
- Advanced Photon Source, Argonne National Laboratory
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Seong Keun Kim
- WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National Univ.
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Cheol Seong Hwang
- WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National Univ.
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Kenneth D'Aquila
- Materials Science Division, Argonne National Laboratory
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Jeffrey A. Eastman
- Materials Science Division, Argonne National Laboratory
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Jiyoon Kim
- Department of Materials Science and Engineering, KAIST
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Seungbum Hong
- Center for Nanoscale Materials, Argonne National Laboratory and Department of Materials Science and Engineering, KAIST
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Effect of metallic buffer at electrode-oxide interface on current-voltage characteristics of resistive random access memories (ReRAMs): A first-principles study
ORAL
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Authors
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Takehide Miyazaki
- AIST-NRI
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Hisao Nakamura
- AIST-NRI
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Kengo Nishio
- AIST-NRI
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Hisashi Shima
- AIST-ICANN
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Hiroyuki Akinaga
- AIST-ICANN
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Yoshihiro Asai
- AIST-NRI
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Identifying and Measuring the State Variables in TaOx Memristors
ORAL
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Authors
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Patrick Mickel
- Sandia National Laboratories
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Matthew Marinella
- Sandia National Laboratories
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Conrad James
- Sandia National Laboratories
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Atomic Level Design Rule for Ta-based Resistive Switching devices
POSTER
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Authors
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Seo Hyoung Chang
- Materials Science Division (MSD), Argonne National Laboratory (ANL)
- Materials Science Division, Argonne National Laboratory
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S. Hong
- Argonne National Laboratory
- Center for Nanoscale Materials, ANL
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M.-J. Lee
- Semiconductor Device Laboratory, Samsung Advanced Institute of Technology
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Y.-B. Kim
- Semiconductor Device Laboratory, Samsung Advanced Institute of Technology
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S. Chattopadhyay
- CSRRI-IIT, Physics Dept., Illinois Institute of Technology (IIT) and MRCAT, Advanced Photon Source (APS)
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T. Shibata
- CSRRI-IIT, Physics Dept., Illinois Institute of Technology (IIT) and MRCAT, Advanced Photon Source (APS)
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B. Magyari-Kope
- Dept. of Electrical Engineering, Stanford University
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J.A. Kaduk
- Chemistry dept., IIT
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J.A. Eastman
- MSD, ANL
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J. Kim
- APS, ANL
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First-principles modeling of the electron and ion transport in TiO$_{2}$ ReRAM
ORAL
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Authors
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Liang Zhao
- Department of Electrical Engineering, Stanford University
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Blanka Magyari-Kope
- Department of Electrical Engineering, Stanford University
- Stanford University
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Yoshio Nishi
- Department of Electrical Engineering, Stanford University
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Nanoionic Memristive Switches -- From Fundamentals to Applications
COFFEE_KLATCH · Invited
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Authors
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Rainer Waser
- Forschungszentrum J\"ulich, Peter Gr\"unberg Institut, RWTH Aachen University and JARA-FIT, Germany
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Nanoionic switching in metal oxide nanostructures
COFFEE_KLATCH · Invited
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Authors
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Daniele Ielmini
- Politecnico di Milano
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Finite Element Modeling of Ag Transport and Reactions in Chalcogenide Glass Resistive Memory
ORAL
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Authors
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Hugh Barnaby
- ASU
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Arthur Edwards
- ARFL
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David Oleksy
- ASU
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Michael Kozicki
- ASU
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Electronic Structure of Cu$_{2}$N, a Thin-film Insulating Surface
ORAL
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Authors
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Sareh Heidari
- Department of Physics \& Astronomy, University College London, UK; London Centre for Nanotechnology, UK.
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Andrew J. Fisher
- Department of Physics \& Astronomy, University College London, UK; London Centre for Nanotechnology, UK.
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Giant piezoresistive response in SmSe thin films under uniaxial strain
ORAL
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Authors
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Marcelo Kuroda
- IBM T.J. Watson Research Center
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Matt Copel
- IBM T.J. Watson Research Center
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Thomas Shaw
- IBM T.J. Watson Research Center
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Xiao Hu Liu
- IBM T.J. Watson Research Center
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Glenn Martyna
- IBM T.J. Watson Research Center
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Dennis Newns
- IBM T.J. Watson Research Center
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Resistive and Capacitive Memory Effects in Oxide Insulator/ Oxide Conductor Hetero-Structures
ORAL
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Authors
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Rene Meyer
- Rambus, Sunnyvale, California
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Maosheng Miao
- University of California, Santa Barbara, California
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Jian Wu
- Rambus, Sunnyvale, California
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Christophe Chevallier
- Rambus, Sunnyvale, California
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