Trap effects in the analysis of conducting probe AFM current-voltage relations

Current-voltage relations of conducting probe AFM (CP-AFM) measurements demonstrate that trap effects are important in nanostructured P3HT thin films, particularly prior to thermal annealing. In order to analyze these measurements, we have developed fully three dimensional continuum device models incorporating the CP-AFM tip geometry and nanoscale morphology of the films. Results will be presented for a variety of trap systems in three dimensional model morphologies including nanofibrous structures and systems with inhomogeneous trap distributions. The simulation results will be compared with experimental data.