Electronic structure of multilayer graphene with a mixture of Bernal and rhombohedral stacking

We propose a general scheme to describe the electronic band structure of multilayer graphene with an arbitrary mixture of Bernal and rhombohedral stacking. The system can be viewed as a series of finite Bernal graphite sections connected by rhombohedral-type stacking faults. We find that the low-energy eigenstates are mostly localized in each Bernal section, and the whole spectrum is well approximated by a collection of the spectra of independent sections. In the ensemble-averaged electronic structure, there are frequently-appearing linear bands and quadratic bands with particular band velocities or curvatures, corresponding to finite Bernal sections and their combinations.