Quantumn Hall Effect in single-, bi- and tri-layer graphene

ORAL

Abstract

Quantum Hall Effect has been extensively studied in single layer, bilayer and trilayer graphene. Our recent studies showed intrinsic gapped state at the charge neutrality point in bilayer and trilayer graphene. Here we describe the fabrication of high-quality single-bilayer and bi-trilayer hybrid graphene devices, and present results from magneto-transport measurements.

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Authors

  • Zeng Zhao

    • University of California, Riverside

  • Kevin Myhro

    • University of California, Riverside

  • David Tran

    • University of California, Riverside

  • Hang Zhang

    • University of California, Riverside

  • Jhao-wun Huang

    • University of California, Riverside

  • Jairo Velasco

    • UC Berkeley
    • University of California, Riverside

  • Yanmeng Shi

    • University of California, Riverside

  • Fenglin Wang

    • Department of Physics and Astronomy, University of California, Riverside
    • University of California, Riverside

  • Yongjin Lee

    • University of California, Riverside

  • Chun Ning Lau

    • University of California, Riverside