Electron Transport in Edge Metal-Insulator-Metal Tunnel Junctions Modulated by Underlying Ferroelectric Polarization Switching

ORAL

Abstract

The electron energy band profile in an Edge Metal-Insulator-Metal tunnel junction (EMIM) on a Insulator/Ferroelectric thin film was calculated by performing finite-element electrostatic modeling. It is found that the energy band profile in the EMIM junction alters significantly near the underlying Insulator/Ferroelectric layer depending on the polarization direction of ferroelectric layer. The energy band profile shows pinch-off when the interface bound charge at Insulator/Ferroelectric interface is negative while it shows a valley-like shape when the interface bound charge is positive. The change of the energy band profile depending on ferroelectric polarization was confirmed to result in a significant change of electron tunneling current by using WKB method. It is believed that this switching of electron tunneling resistance in the EMIM junction opens up a way to develop non-volatile ferroelectric memory devices using non-destructive read-out.

*NRF(2010-0004370) funded by MEST in Korea

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Authors

  • Kibog Park

    • Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea

  • Youngeun Jeon

    • Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea

  • Sungchul Jung

    • Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea

  • Han Byul Jin

    • Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea

  • Jae-Hyeon Go

    • Hallym University, Chuncheon Gangwondo 200-702, South Korea

  • Soon-Yong Kwon

    • Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea

  • Nam Kim

    • Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea