Dynamic resistive switching controlled by local lateral gating in phase separated manganite wires

Behaviors such as high T$_{\mathrm{c}}$ superconductivity, colossal magnetoresistivity, and the metal-insulator transition, have been tied to inherent electronic phases coexisting in a single crystal material. Here we demonstrate a novel approach to induce resistive electric field effect transitions based on the modification of the inherent electronic domain structures in single crystal materials. A phase separated manganite system confined to a scale which isolates a few electronic domains is controlled using laterally gated which give repeatable resistive changes of up to 50{\%}. This technique also makes it possible to create multistate switching devices from a single confined transport channel. These findings provide an avenue to control inherent electronic phases in strongly correlated materials as a means of creating novel nano-electronic devices. Supported by the US DOE Office of Basic Energy Sciences, Materials Sciences and Engineering Division.