Magnetoelectric coupling at the EuO/BaTiO$_{3}$ interface
ORAL
Abstract
Magnetization modulation by ferroelectric polarization pinning is reported for the ferromagnetic-ferroelectric EuO/BaTiO$_{3}$ (EuO/BTO) heterostructures. Away from T$_{c}$, the critical exponent $\beta $ indicates that the magnetization of EuO is consistent with mean field theory despite suggestions that EuO is a typical Heisenberg ferromagnetic semiconductor. The Heisenberg model is also inconsistent with the significant band dispersion seen in EuO thin films. The possible mechanisms include extrinsic doping and/or pinning of interface states at the EuO/BTO interface. The results are discussed in the context of data also obtained for La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/BaTiO$_{3}$ heterostructures, where the critical exponent $\beta $ is also close to the predictions of mean field theory, suggesting a similarity in the importance of the magnetic interface with a ferroelectric and the possible importance of ferroelectric polarization reversal.
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