All-thin-film multiferroic heterostructured cantilevers in linear and nonlinear dynamic regimes

ORAL

Abstract

We report on fabrication and characterization of all-thin-film multiferroic magnetoelectric (ME) cantilever devices and their different modes of operation in both linear and nonlinear dynamic regimes. The devices are built on micro-electromechanical system (MEMS) platforms that involve stress-engineered designs based on \textit{silicon oxide/nitride/oxide (ONO)} stacks. The ME layers consist of a magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin film and a Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_{3}$ piezoelectric thin film. The resonant frequency was found to display DC magnetic field dependence indicative of the interplay between the anisotropy and Zeeman energies. In the magnetically-driven mode, the harvested peak power at 1 \textit{Oe} is 0.7\textit{ mW/cm}$^{3}$ (RMS) at the resonant frequency (\textit{3.8 kHz}) and the quality factor also displays strong dependence on the DC magnetic bias. In certain conditions, the multiferroic devices show nonlinear behaviors important to logic implementation and parametric amplification.

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Authors

  • Tiberiu-Dan Onuta

    • Materials Science and Engineering Department, University of Maryland, College Park

  • Yi Wang

    • Physics Department, University of Maryland, College Park

  • Samuel Lofland

    • Physics Department, Rowan University, NY
    • Rowan University Department of Physics and Astronomy
    • Department of Physics and Astronomy, Rowan University

  • Christian J. Long

    • Physics Department, University of Maryland, College Park

  • Ichiro Takeuchi

    • University of Maryland - Department of Materials Science and Engineering
    • University of Maryland, College Park
    • Department of Materials Science and Engineering, University of Maryland, College Park, MD 20424
    • Materials Science and Engineering Department, University of Maryland, College Park
    • MSE Department and CNAM, UMD College Park