Focus Session: Graphene Devices V
FOCUS · G7 ·
Presentations
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Coarse-grained quantum transport simulation for analyzing leakage-mobility antagonism in GNRFET
ORAL
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Authors
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Masakatsu Ito
- National Institute of Advanced Industrial Science and Technology (AIST)
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Shintaro Sato
- National Institute of Advanced Industrial Science and Technology (AIST)
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Naoki Yokoyama
- National Institute of Advanced Industrial Science and Technology (AIST)
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Christian Joachim
- Centre d'Elaboration des Mat\'eriaux et d'Etudes Structurales (CEMES-CNRS) \& MANA Satellite
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Density of States and Its Local Fluctuations Determined by Capacitance of Strongly Disordered Graphene
ORAL
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Authors
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Xiaolong Chen
- Hong Kong University of Science and Technology
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Wei Li
- Hong Kong University of Science and Technology
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Lin Wang
- Hong Kong University of Science and Technology
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Yuheng He
- Hong Kong University of Science and Technology
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Zefei Wu
- Hong Kong University of Science and Technology
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Yuan Cai
- Hong Kong University of Science and Technology
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Mingwei Zhang
- Hong Kong University of Science and Technology
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Yang Wang
- Hong Kong University of Science and Technology
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Yu Han
- Hong Kong University of Science and Technology
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Rolf W. Lortz
- Hong Kong University of Science and Technology
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Zhao-Qing Zhang
- Hong Kong University of Science and Technology
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Ping Sheng
- Hong Kong University of Science and Technology
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Ning Wang
- Hong Kong University of Science and Technology
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Understanding Quantum Transport and the Kondo Effect in 2D Carbon Systems
ORAL
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Authors
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Ross McIntosh
- University of the Witwatersrand
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Dmitry Churochkin
- University of the Witwatersrand
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Somnath Bhattacharyya
- University of the Witwatersrand
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An Essential Mechanism of Heat Dissipation in Nanocarbon Electronics
ORAL
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Authors
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Slava V. Rotkin
- Lehigh University
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Alexey G. Petrov
- Ioffe Institute
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Determination of dominant scatterer in Graphene on SiO$_2$ using atomic hydrogen
ORAL
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Authors
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Jyoti Katoch
- Department of Physics and Nanoscience Center, University of Central Florida, Orlando, Fl
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Duy Le
- Department of Physics, University of Central Florida, Orlando, Fl
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Talat Rahman
- Deparment of Physics, University of Central Florida, Orlando, Fl
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Masa Ishigami
- Deparment of Physics and Nanoscience Center, University of Central Florida, Orlando, Fl
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The zero-voltage conductance of nano-graphenes: Simple rules and quantitative estimates
ORAL
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Authors
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Matthias Ernzerhof
- University of Montreal
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Yongxi Zhou
- University of Montreal
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Didier Mayou
- Institute N{\'e}el, Grenoble
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Graphene devices and its performance limitations and opportunities
COFFEE_KLATCH · Invited
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Authors
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Tony Low
- IBM TJ Watson Research Center
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Epitaxial Graphene on SiC for Ultra-high Frequency Transistors
ORAL
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Authors
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Zelei Guo
- School of Physics, Georgia Institute of Technology
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Rui Dong
- School of Physics, Georgia Institute of Technology
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Partha Sarathi Chakraborty
- School of Electrical and Computer Engineering, Georgia Institute of Technology
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Nelson Lourenco
- School of Electrical and Computer Engineering, Georgia Institute of Technology
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James Palmer
- Georgia Institute of Technology
- School of Physics, Georgia Institute of Technology
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Yike Hu
- School of Physics, Georgia Tech
- School of Physics, Georgia Institute of Technology
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Ming Ruan
- School of Physics, Georgia Institute of Technology
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John Hankinson
- Georgia Institute of Technology, School of Physics
- School of Physics, Georgia Institute of Technology
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Jan Kunc
- School of Physics, Georgia Institute of Technology
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John Cressler
- School of Electrical and Computer Engineering, Georgia Institute of Technology
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Claire Berger
- School of Physics, Georgia Institute of Technology
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Walt deHeer
- School of Physics, Georgia Institute of Technology
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Effect of back-gate bias on Graphene RF device performance
ORAL
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Authors
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Wenjuan Zhu
- IBM T.J. Watson Research Center
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Damon Farmer
- IBM T.J. Watson Research Center
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Yanqing Wu
- IBM T.J. Watson Research Center
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Bruce Ek
- IBM T.J. Watson Research Center
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Keith Jenkins
- IBM T.J. Watson Research Center
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Phaedon Avouris
- IBM T.J. Watson Research Center
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Can we reduce the OFF currents of graphene without hurting their ON currents?
ORAL
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Authors
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Frank Tseng
- University of Virginia
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Gianluca Fiori
- University of Pisa
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Avik Ghosh
- University of Virginia
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Electrical Transport Properties of Graphene Oxide Transistor Using Step-by-Step Reduction
ORAL
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Authors
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Seung Jae Baek
- Seoul National University
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Min Park
- Seoul National University
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Byung Hoon Kim
- Ulsan National Institute of Science and Technology(UNIST)
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Yongseok Jun
- Ulsan National Institute of Science and Technology(UNIST)
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Yung Woo Park
- Seoul National University
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Mechanism of the doping dependence of 2D Raman band: Dirac-cone migration
ORAL
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Authors
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Ken-ichi Sasaki
- NTT Basic Research Labs
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Yasuhiro Tokura
- Tsukuba University
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Satoru Suzuki
- NTT Basic Research Labs
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Tetsuomi Sogawa
- NTT Basic Research Labs
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Effect of gate-induced doping on the Raman spectra of disordered graphene
ORAL
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Authors
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Isaac Childres
- Purdue University
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Luis A. Jauregui
- Purdue University
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Yong P. Chen
- Purdue University
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