H$_2$ exposure induced structural and electrical modulation in MoS$_2$

ORAL

Abstract

We have demonstrated the structural modulation at the edge of MoS$_2$ due to H$_2$ exposure with spatially resolved Raman spectroscopy and the electrical characteristics of few-layer MoS$_2$ with respect to H$_2$ pressure from vacuum to 20 bars at 295 K \textless\ $T$ \textless\ 350 K. Upon H$_2$ exposure, the significant change of the edge in E$_{\mathrm{2g}}$ mode was observed. The conductance increases and threshold voltage ($V_{th})$ shifts toward a negative gate voltage region, indicating n-type doping. These behaviors are enhanced by high temperature and long exposure time ($t)$. The results reveal the creation of vacancy at the edge sites of MoS$_2$ in H$_2$ atmosphere causing the enhancement of $n$-type doping due to increase of metallic region.

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Authors

  • Min Park

    • Seoul National Univerisy

  • Sung Jin Chang

    • Division of Materials Science, Korea Basic Science Institute

  • Hu Young Jung

    • UNIST Central Research Facility and School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology

  • Seung Jae Baek

    • Department of Nanoscience and Technology, Seoul National Univerisy

  • Yongseok Jun

    • Interdisciplinary School of Green Energy, KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology

  • Byung Hoon Kim

    • Interdisciplinary School of Green Energy, KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology

  • Yung Woo Park

    • Department of Physics and Astronomy, Seoul National University