Patterning of GaAs and Si substrates using self-organized Al$_{2}$O$_{3}$ templates and epitaxial growth of GaAs nanostructures

ORAL

Abstract

Reactive ion etching is used with Al$_{2}$O$_{3}$ templates to pattern SiO$_{2}$ films deposited on GaAs and Si substrates. The technique allows nanopatterning of substrates without photo or e-beam lithography. The SiO$_{2}$ film pattern consists of holes of about 80 nm diameter with a pitch of about 100 nm. GaAs nanostructures are grown on the patterned substrates by molecular beam epitaxy. The observed arrays of nanostructures closely follow the patterns on SiO$_{2}$. Several types of structures are observed depending on the growth conditions, including pillars with flat hexagonal tops and pyramidal triangular tops. Characterization of the structures will be discussed. This work was supported by NSF DMR1006286.

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Authors

  • Archana Kumari

    • Physics Department of University at Buffalo, The State University of New York
    • University at Buffalo, The State University of New York

  • John Hatch

    • Physics Department of University at Buffalo, The State University of New York
    • University at Buffalo, The State University of New York

  • Jaesuk Kwon

    • Physics Department of University at Buffalo, The State University of New York
    • University at Buffalo, The State University of New York

  • Xin Zhang

    • Physics Department of University at Buffalo, The State University of New York
    • University at Buffalo, The State University of New York

  • Everett Fraser

    • University at Buffalo, The State University of New York

  • Chae Hyun Kim

    • University at Buffalo, The State University of New York

  • Hao Zeng

    • Physics Department of University at Buffalo, The State University of New York
    • University at Buffalo, The State University of New York

  • Hong Luo

    • Physics Department of University at Buffalo, The State University of New York
    • University at Buffalo, The State University of New York