Two Dimensional Topological Insulators II: Graphene and Related Materials

ORAL · G18 ·

Presentations

  • ORAL

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    Authors

    • Andrii Iurov

      • Hunter College, CUNY
      • Hunter College and Graduate Center, CUNY

    • Godfrey Gumbs

      • Department of Physics and Astronomy, Hunter College at the City University of New York
      • Hunter College, CUNY
      • Hunter College of CUNY
      • Hunter College of the City University of New York
      • Hunter College of the CUNY

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  • ORAL

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    Authors

    • Jiang Jiang

      • International Center for Quantum Materials, Peking University, Beijing 100871, China

    • Zhenhua Qiao

      • Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

    • Haiwen Liu

      • Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

    • Junren Shi

      • International Center for Quantum Materials, Peking University, Beijing 100871, China

    • Qian Niu

      • International Center for Quantum Materials, Peking University, Beijing 100871, China

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  • ORAL

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    Authors

    • Gufeng Zhang

      • Univ. of Sci. \& Tech. of China, Fudan University

    • Xiaoguang Li

      • Fudan University
      • Fudan University, Univ. of Sci. \& Tech. of China

    • Guangfen Wu

      • Univ. of Sci. \& Tech. of China, Shenzhen Institutes of Advanced Technology

    • Jie Wang

      • ICQD, University of Science and Technology of China
      • Univ. of Sci. \& Tech. of China

    • Dimitrie Culcer

      • ICQD, University of Science and Technology of China
      • Univ. of Sci. \& Tech. of China

    • Efthimios Kaxiras

      • School of Engineering and Applied Sciences, Harvard University and Department of Physics, Harvard University
      • Department of Physics and School of Engineering and Applied Sciences, Harvard University
      • Physics Department, Harvard University, Cambridge, MA
      • Harvard University
      • Department of Physics, Harvard University

    • Zhenyu Zhang

      • University of Science and Technology of China
      • ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
      • Univ. of Sci. \& Tech. of China, Harvard University
      • Univ of Science \& Technology of China \& Univ of Texas at Austin
      • ICQD, Hefei National Laboratory for Physical Sciences at Microscales, University of Science and Technology of China
      • ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China

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  • ORAL

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    Authors

    • Pouyan Ghaemi

      • University of Illinois at Urbana-Champaign
      • UIUC
      • University of Illinois

    • Sarang Gopalakrishnan

      • University of Illinois at Urbana-Champaign, Harvard University

    • Taylor Hughes

      • University of Illinois at Urbana-Champaign
      • University of Illinois, Urbana-Champaign
      • Department of Physics, University of Illinois at Urbana-Champaign
      • University of Illinois. Urbana-Champaign

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  • ORAL

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    Authors

    • Athanasios Dimoulas

      • NCSR DEMOKRITOS, Athens, Greece

    • Evangelos Golias

      • NCSR DEMOKRITOS, Athens, Greece

    • Evangelia Xenogiannopoulou

      • NCSR DEMOKRITOS, Athens, Greece

    • Dimitra Tsoutsou

      • NCSR DEMOKRITOS, Athens, Greece

    • Polixronis Tsipas

      • NCSR DEMOKRITOS, Athens, Greece

    • Sigiava Giamini

      • NCSR DEMOKRITOS, Athens, Greece

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  • ORAL

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    Authors

    • M.S. Miao

      • Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA

    • Qimin Yan

      • University of California at Santa Barbara
      • Materials Department, University of California, Santa Barbara
      • Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA
      • Materials Department, University of California at Santa Barbara

    • Chris Van de Walle

      • University of California at Santa Barbara
      • Materials Department, University of California, Santa Barbara
      • Materials Department, University of California Santa Barbara
      • University of California, Santa Barbara
      • University of California, Santa Barbara Materials Department
      • University of California Santa Barbara
      • Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA
      • Materials Department, University of California at Santa Barbara

    • W.K. Lou

      • SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

    • L.L. Li

      • SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

    • K. Chang

      • SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

    View abstract →

  • ORAL

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    Authors

    • Jos\'e Eduardo Padilha

      • University of S\~ao Paulo

    • Renato B. Pontes

      • Federal University of Goi\'as

    • Leandro Seixas

      • University of S\~ao Paulo

    • Ant\^onio J.R. da Silva

      • Laboratorio Nacional de Luz Sincrotron and Instituto de Fisica da Universidade de Sao Paulo
      • University of S\~ao Paulo

    • Adalberto Fazzio

      • University of S\~ao Paulo
      • Universidade de S\~ao Paulo
      • Universidade de Sao Paulo
      • Instituto de F\'{i}sica, Universidade de S\~{a}o Paulo

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  • ORAL

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    Authors

    • Thakshila M. Herath

      • Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA

    • Prabath Hewageegana

      • Department of Physics, University of Kelaniya, Kelaniya 11600, Sri Lanka

    • Vadim M. Apalkov

      • Georgia State University
      • Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA

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