Vertical Transport Properties of Graphene/h-BN Hetrostructures

ORAL

Abstract

We present results of extensive first principles, studying the scaling behaviour of inter-layer tight-binding hopping parameters in vertical graphene/h-BN heterostructures. We focus, in particular, on the dependence of these parameters on orientational disorder and inter-layer distances. We will report relevant inputs for numerical studies of the vertical transport in graphene/h-BN heterostructures.

*SWAN, ONR

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Authors

  • Shayan Hemmatiyan

    • Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA

  • Xingyuan Pan

    • Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA
    • Texas A\&M University

  • Marco Polini

    • NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy
    • NEST-CNR-INFM and Scuola Normale Superiore, I-56126 Pisa, Italy
    • NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore

  • Allan MacDonald

    • The University of Texas at Austin
    • Department of Physics, University of Texas at Austin
    • University of Texas Austin
    • University of Texas at Austin
    • Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA

  • Jairo Sinova

    • Texas A\&M University, USA; Institute of Physics, ASCR, CZ
    • Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA