Focus Session: Dopants and Defects in Semiconductors IV
FOCUS · F23 ·
Presentations
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The electronic structure of Group V dopants in silicon -- The requirements for a realistic DFT model
ORAL
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Authors
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Veronika Brazdova
- University College London
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David Bowler
- University College London, London Centre of Nanotechnology
- University College London
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Andrew J. Fisher
- University College London
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Charged defect in GaSb by selective occupation in density functional theory
ORAL
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Authors
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Jianwei Wang
- Department of Electrical and Computer Engineering, UNC Charlotte
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Yong Zhang
- Department of Electrical and Computer Engineering, UNC Charlotte
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ABSTRACT WITHDRAWN
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Small polaron characteristics of the OH center in TiO$_{2}$
COFFEE_KLATCH · Invited
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Authors
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Beall Fowler
- Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
- Lehigh University
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H and D centers in In$_{2}$O$_{3}$ studied by IR spectroscopy
ORAL
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Authors
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Weikai Yin
- Lehigh University
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Kirby Smithe
- University of Tulsa
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Michael Stavola
- Lehigh University
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W. Beall Fowler
- Lehigh University
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L.A. Boatner
- Oak Ridge National Laboratory
- Oak Ridge National Lab
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Controlled introduction of defects in GaMnAs and GaBeAs thin films by ion-beam irradiation
ORAL
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Authors
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Marcelo Sant'Anna
- Universidade Federal do Rio de Janeiro
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Elis Sinnecker
- Instituto de F\'isica, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-909, RJ, Brazil
- Universidade Federal do Rio de Janeiro
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Tatiana Rappoport
- Universidade Federal do Rio de Janeiro
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Mauricio Pires
- Universidade Federal do Rio de Janeiro
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Germano Penello
- Universidade Federal do Rio de Janeiro
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David Souza
- Universidade Federal do Rio de Janeiro
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Sergio Mello
- Universidade Federal do Rio de Janeiro
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Joaquim Mendes
- Universidade Federal do Rio de Janeiro
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Jacek Furdyna
- University of Notre Dame
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Xinyu Liu
- University of Notre Dame
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The role of d levels of substitutional magnetic impurities at the (110) GaAs surface
ORAL
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Authors
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M.R. Mahani
- Linnaeus University, Kalmar, Sweden
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Anna Pertsova
- Linnaeus University, Kalmar, Sweden
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Fhokrul Islam
- Linnaeus University, Kalmar, Sweden
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C.M. Canali
- Linnaeus University, Kalmar, Sweden
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Optical measurements of trap state density and minority carrier lifetime in GaAs heterostructures grown at varying rates
ORAL
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Authors
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Chelsea Haughn
- University of Delaware
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Kenneth Schmieder
- University of Delaware
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Joshua Zide
- University of Delaware
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Allen Barnett
- Univeristy of New South Wales
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Chris Ebert
- Veeco MOCVD
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Robert Opila
- University of Delaware
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Matthew Doty
- University of Delaware
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First-principles study on scattering potentials of defects on Ge(001) surfaces
ORAL
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Authors
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Tomoya Ono
- Osaka University
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Why Cu diffuses fast in semiconductors?
ORAL
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Authors
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Jie Ma
- national renewable energy lab
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Su-Huai Wei
- national renewable energy lab
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Density functional study of the properties of Tl6SeI4 for radiation detection applications
ORAL
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Authors
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Koushik Biswas
- Arkansas State University
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Mao-Hua Du
- Oak Ridge National Laboratory
- Oak Ridge National Lab
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David Singh
- Oak Ridge National Laboratory
- ORNL
- Materials Science and Engineering Division Oak Ridge National Laboratory
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Electronic Structure Engineering of Elpasolites for Brighter and Faster Scintillators
ORAL
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Authors
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Mao-Hua Du
- Oak Ridge National Laboratory
- Oak Ridge National Lab
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Koushik Biswas
- Department of Chemistry and Physics, Arkansas State University
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Hydrogen configurations at a high-angle grain boundary in yttria-stabilized zirconia
ORAL
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Authors
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Apostolos Marinopoulos
- CEMDRX and Physics Department, University of Coimbra
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