MoS$_{2}$ Field Effect Transistors with different polarity: study of electrode work functions

ORAL

Abstract

The transfer characteristics of Molybdenum disulfide (MoS$_{2})$ field effect transistors (FETs) depend on the Schottky barrier formed between the metal electrode and the semiconducting MoS$_{2}$. We obtained p-type behavior for Pd-contacted MoS$_{2}$ FETs and n-type with both Au and Nb [1] contacts. We study the work function of these electrode metals to understand their effect on the Schottky barrier and therefore the polarity of the MoS$_{2}$ FETs. The work function of the above metals is measured using a non-contact Kelvin Probe technique under different ambient conditions. We will discuss the observed n-type and p-type behavior of MoS$_{2}$ FETs in relation to the measured metal work functions.\\[4pt] [1] M. Fontana, T. Deppe, A. Boyd, M. Rinzan, A. Liu, M. Paranjape, P. Barbara, Photovoltaic effect in gated MoS2 Schottky junctions, in, arXiv:1206.6125v1 [cond-mat.mtrl-sci]

*Work Funded by NSF, DMR 1008242

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Authors

  • Isha Dube

    • Georgetown University

  • Anthony K. Boyd

    • Georgetown University

  • Marcio Fontana

    • Georgetown University, Federal University of Bahia
    • Federal University of Bahia, Salvador

  • Igor Gayduchenko

    • National Research Centre Kurchatov Institute, Moscow, Russia.

  • Georgy Fedorov

    • National Research Centre Kurchatov Institute, Moscow, Russia.

  • Amy Liu

    • Georgetown University

  • Makarand Paranjape

    • Department of Physics, Georgetown University, Washington, D.C. 20057, USA
    • Georgetown University

  • Paola Barbara

    • Department of Physics, Georgetown University, Washington, D.C. 20057, USA
    • Georgetown University