Transport Measurements of Multi-terminal MoS2 Devices

We report progress on the fabrication and measurement of multi-terminal devices based on few-layer MoS2. By using different contact metal recipes, we describe efforts to significantly decrease contact resistance and gain access to the intrinsic transport properties of MoS2. We measured four-terminal resistance of monolayer, bilayer, and trilayer MoS2 with Ohmic contacts to obtain the intrinsic field-effect mobility of these materials on SiO2 substrates at temperatures down to 4 K. We also probed Hall transport of MoS2 and extracted the temperature dependence of its Hall mobility.