Focus Session: Domains, Switching, and Memristors
FOCUS · C21 ·
Presentations
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Phenomenological study of switching in strongly coupled multiferroics
ORAL
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Authors
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Kuntal Roy
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Craig J. Fennie
- School of Applied and Engineering Physics, Cornell University
- Cornell University, Ithaca, New York 14853 USA
- Scholl of Applied and Engineering Physics, Cornell University
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
- Cornell University
- School of Applied \& Engineering Physics, Cornell University
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Polarization switching dynamics in thin-film BaTiO$_{3}$/PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ bilayer capacitors
ORAL
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Authors
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Pavel Salev
- The University of Tulsa
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Alexei Grigoriev
- The University of Tulsa
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Domain Switching and Interaction with Misfit Dislocation in Bismuth Ferrite thin films: Phase-Field Simulation
ORAL
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Authors
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Khalid Ashraf
- EECS Dept, UC Berkeley
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Sayeef Salahuddin
- EECS Dept, UC Berkeley
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Ferroelectric and multiferroic domain imaging by Laser-induced photoemission microscopy
ORAL
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Authors
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Anke Hoefer
- Institute of Physics, Martin Luther University Halle-Wittenberg
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Michael Fechner
- Materials Theory, ETH Zurich
- Max Planck Institute of Microstructure Physics Halle
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Klaus Duncker
- Institute of Physics, Martin Luther University Halle-Wittenberg
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Ingrid Mertig
- Institute of Physics, Martin Luther University Halle-Wittenberg
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Wolf Widdra
- Institute of Physics, Martin Luther University Halle-Wittenberg
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Bloch-type domain walls in rhombohedral BaTiO$_3$
ORAL
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Authors
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Maryam Taherinejad
- Rutgers University
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David Vanderbilt
- Department of Physics and Astronomy, Rutgers University
- Rutgers University
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Pavel Marton
- Academy of Sciences of the Czech Republic
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Vilgelmina Stepkova
- Academy of Sciences of the Czech Republic
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Jiri Hlinka
- Academy of Sciences of the Czech Republic
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Domain wall roughness and creep behavior in nanoscale crystalline ferroelectric oxide and polymer films
ORAL
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Authors
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Zhiyong Xiao
- Department of Physics and Astronomy, University of Nebraska-Lincoln
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Shashi Poddar
- Department of Physics and Astronomy, University of Nebraska-Lincoln
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Stephen Ducharme
- Department of Physics and Astronomy, University of Nebraska-Lincoln
- Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
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Xia Hong
- Department of Physics and Astronomy, University of Nebraska-Lincoln
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Equilateral triangular ferroelectric closure domains in (111)-oriented epitaxial Pb(Zr,Ti)O$_3$ thin films
ORAL
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Authors
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Sang Mo Yang
- CFI-CES, Institute for Basic Science, and Dept. of Physics \& Astronomy, Seoul Nat'l Univ., Seoul, Korea
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Y.J. Shin
- CFI-CES, Institute for Basic Science, and Dept. of Physics \& Astronomy, Seoul Nat'l Univ., Seoul, Korea
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T.W. Noh
- CFI-CES, Institute for Basic Science, and Dept. of Physics \& Astronomy, Seoul Nat'l Univ., Seoul, Korea
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Y. Ehara
- Dept. of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama, Japan
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H. Funakubo
- Dept. of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama, Japan
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J.-G. Yoon
- Dept. of Physics, Univ. of Suwon, Hwaseong, Gyunggi-do, Korea
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J.F. Scott
- Dept. of Physics, Cavendish Laboratory, Univ. of Cambridge, Cambridge, UK
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Probing the Atomic Structure and Dynamics of Ferroelectric Domain Walls during Electrical Switching in Real Time
COFFEE_KLATCH · Invited
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Authors
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Xiaoqing Pan
- University of Michigan
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
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Two mechanisms of resistive memories in complex oxide thin films
ORAL
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Authors
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Kui-Juan Jin
- Institute of Physics, CAS
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Can Wang
- Institute of Physics, CAS
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Zhongtang Xu
- Institute of Physics, CAS
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Shock wave mechanism for bipolar resistive switching
ORAL
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Authors
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S. Tang
- Florida State University
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V. Dobrosavljevi\'c
- Florida State University
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M. Rozenberg
- Univ. de Paris, Orsay
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Using Noise to Study Switching Dynamics of Oxide Memristors
ORAL
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Authors
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A.M. Bratkovsky
- Hewlett-Packard Laboratories, Palo Alto, CA 94304
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Wei Yi
- Hewlett-Packard Laboratories, Palo Alto, CA 94304
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G. Medeiros-Ribeiro
- Hewlett-Packard Laboratories, Palo Alto, CA 94304
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R.S. Williams
- Hewlett-Packard Laboratories, Palo Alto, CA 94304
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S. Savel'ev
- Loughborough U, United Kingdom
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The rules of the resistive switching operation parameters based on Ta/Ta$_{2}$O$_{5}$ RRAM device
ORAL
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Authors
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Haitao Li
- GMU \& NIST
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Curt Richter
- NIST
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Oleg Kirillov
- NIST
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Hui Yuan
- GMU
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Hao Zhu
- GMU
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Dimitris Ioannou
- GMU
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Qiliang Li
- Dept. of ECE, George Mason University
- GMU
- George Mason University, Fairfax, VA 22030
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Thermophoresis (Soret Effect) in Memristor Calculations
ORAL
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Authors
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Harold Hjalmarson
- Sandia National Laboratory
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Patrick Mickel
- Sandia National Laboratory
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Gad Haase
- Sandia National Laboratory
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Andrew Lohn
- Sandia National Laboratory
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Matthew Marinella
- Sandia National Laboratory
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Michael McLain
- Sandia National Laboratory
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Andrew Pineda
- Air Force Research Laboratory
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