Current induced Metal-Semiconductor Transition in VO2 grown on Pt

ORAL

Abstract

Vanadium dioxide (VO$_{2}$) exhibits a metal-semiconductor transition at 340K; this transition can also be triggered by an electric field or direct current injection. In this study VO$_{2}$ was grown on 100 nm thick Pt bottom electrodes. The top Pt contacts were added for the transport measurements. The transport behavior indicated a reduced transition temperature. We have shown that the switching voltage for a Pt/VO2/Pt structure was as low as 0.3 V, and at this voltage we observed two orders of magnitude change in the resistance. XPS will be used to determine the valence state.

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Authors

  • Jiwei Lu

    • University of Virginia
    • Department of Materials Science and Engineering, University of Virginia

  • Salinporn Kittiwatanakul

    • University of Virginia
    • Department of Physics, University of Virginia

  • Stuart Wolf

    • University of Virginia
    • Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904
    • University of Virginia, Dept. of Materials Science and Engineering
    • Department of Physics, University of Virginia