Metal-Insulator Transition in Epitaxial Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$ thin Films

ORAL

Abstract

Recently there is a surge of interest in searching for topological order in correlated electronic systems such as transition metal oxides. The strong spin-orbit interaction of 5d electrons and the geometric frustration in the crystal lattice make the pyrochlore iridate(A$_2$Ir$_2$O$_7$) an ideal candidate to achieve this goal. Pioneering experiments on bulk polycrystalline and single crystal samples revealed a temperature dependent metal-insulator transition coupled to a long range magnetic order, and the transition temperature can be tuned by either A-site ionic radius or an external pressure. In this talk we present our efforts to understand and control the metal-insulator transition and the underlying electronic structure of pyrochlore iridates via epitaxial Bi$_2$Ir$_2$O$_7$ thin films. Bulk Bi$_2$Ir$_2$O$_7$ is located at the metallic side of the phase diagram. However as the film's thickness decreases the transport evolves from a metallic to a strongly localized character. Resonant X-ray spectroscopy suggests that the density of states near Fermi level is dominated by the Ir J$_eff$=1/2 states. Intriguingly, the magnetoresistance shows a linear field dependence over a wide range of fields at low temperatures, which is possibly consistent with the existence of Dirac nodes.

Authors

  • Jiun-Haw Chu

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley
  • Jian Liu

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley
  • Di Yi

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley
  • C. Rayan-Serrao

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley
  • S. Suresha

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley
  • Xavi Marti

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley
  • Scott Riggs

    • Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University
  • Max Shapiro

    • Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University
  • Fisher Ian

    • Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University
  • R. Ramesh

    • Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley