Focus Session: Graphene Devices II
FOCUS · B7 ·
Presentations
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Tunnel magnetoresistance of magnetic junctions based on side-wall epitaxial graphene nanoribbons
ORAL
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Authors
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Chao Huan
- School of Physics, Georgia Institute of Technology
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John Hankinson
- Georgia Institute of Technology, School of Physics
- School of Physics, Georgia Institute of Technology
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Wenlong Yu
- School of Physics, Georgia Institute of Technology
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Rui Dong
- School of Physics, Georgia Tech
- School of Physics, Georgia Institute of Technology
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James Palmer
- Georgia Institute of Technology
- School of Physics, Georgia Institute of Technology
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Owen Vail
- School of Physics, Georgia Institute of Technology
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Ming Ruan
- School of Physics, Georgia Institute of Technology
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Claire Berger
- School of Physics, Georgia Tech
- Georgia Institute of Technology and CNRS, Institut Neel, Grenoble
- Gatech - School of Physics, CNRS-Institut Neel
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Edward Conrad
- School of Physics, Georgia Institute of Technology
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Walter de Heer
- School of Physics, Georgia Institute of Technology
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Zhigang Jiang
- School of Physics, Georgia Institute of Technology
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Superconductor-graphene based quantum entangler, a progress report
ORAL
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Authors
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Ivan Borzenets
- The University of Tokyo
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Yuya Shimazaki
- The University of Tokyo
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Juergen Sailer
- The University of Tokyo
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Russell Deacon
- Riken
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Michihisa Yamamoto
- The University of Tokyo
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Seigo Tarucha
- The University of Tokyo
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C-axis magnetoresistance in epitaxially grown multilayer graphene
ORAL
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Authors
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Srikrishna Bodepudi
- University of Alberta
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Abhay Singh
- University of Alberta
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Sandipan Pramanik
- University of Alberta
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Graphene barristor for high performance devices
COFFEE_KLATCH · Invited
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Authors
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Jinseong Heo
- Samsung Advanced Institute of Technology
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Gate Tunable Graphene-Silicon Ohmic/Schottky Contact
ORAL
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Authors
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Chun Chung Chen
- University of Southern California
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Chia Chi Chang
- University of Southern California
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Zhen Li
- University of Southern California
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Zhen Li
- University of Southern California
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Steve Cronin
- University of Southern California
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Hole Injection from Silicon to Oxide Using Graphene as Transparent Electrode
ORAL
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Authors
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Rusen Yan
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
- National Institute of Standards and Technology, Physical Measurement Laboratory, Gaithersburg, Maryland, USA
- NIST; University of Notre Dame
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Huili G. Xing
- University of Notre Dame
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Nhan Van Nguyen
- NIST
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Thin film barristor: a gate tunable vertical graphene-pentacene-gold device
ORAL
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Authors
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Claudia Ojeda-Aristizabal
- Center for Nanophysics and Advanced Materials University of Maryland, College Park
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Wenzhong Bao
- University of Maryland at College Park
- University of Maryland
- Center for Nanophysics and Advanced Materials University of Maryland, College Park
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Michael Fuhrer
- Department of Physics, University of Maryland
- University of Maryland
- CNAM-UMD
- Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA
- Center for Nanophysics and Advanced Materials University of Maryland, College Park
- Center for Nanophysics and Advanced Materials, University of Maryland, College Park
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First-Principles Study of Contact Resistance between Graphene and Metal Electrodes
ORAL
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Authors
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Tomoaki Kaneko
- Computational Materials Science Unit, NIMS
- National Institute for Materials Science
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Takahisa Ohno
- National Institute for Materials Science (NIMS)
- Computational Materials Science Unit, NIMS, Institute of Industrial Science, University of Tokyo
- National Institute for Materials Science, University of Tokyo
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ABSTRACT WITHDRAWN
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A 1D wide band gap graphene metal-semiconductor-metal junction for devices
ORAL
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Authors
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Meredith Nevius
- Georgia Institute of Technology
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Jeremy Hicks
- Georgia Institute of Technology
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Antonio Tejeda
- Synchrotron SOLEIL,Institut Jean Lamour, CNRS - Univ. de Nancy - UPV-Metz
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Amina Taleb-Ibrahimi
- UR1 CNRS/Synchrotron SOLEIL
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Feng Wang
- Georgia Institute of Technology
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Edward Conrad
- Georgia Institute of Technology
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Probing Klein tunneling through angle dependence of resistance across graphene p-n junctions
ORAL
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Authors
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Atikur Rahman
- Johns Hopkins University
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Janice Wynn Guikema
- Johns Hopkins University
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD
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Nina Markovic
- Johns Hopkins University
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Chemically functionalized graphene for bipolar electronics
ORAL
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Authors
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Bernard Matis
- National Research Council/Naval Research Laboratory
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Jeffrey Baldwin
- Naval Research Laboratory
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Brian Houston
- Naval Research Laboratory
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Resist-free graphene/metal interaction extracted through quantum capacitance measurement
ORAL
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Authors
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R. Ifuku
- Department of Materials Engineering, Univ. of Tokyo
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K. Nagashio
- Department of Materials Engineering, Univ. of Tokyo
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T. Nishimura
- Department of Materials Engineering, Univ. of Tokyo
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A. Toriumi
- Department of Materials Engineering, Univ. of Tokyo
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