Focus Session: Dopants and Defects in Semiconductors II
FOCUS · B23 ·
Presentations
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A modification of Eu incorporation sites by the dissociation of hydrogen defect complexes in Mg co-doped Eu doped gallium nitride
ORAL
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Authors
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Brandon Mitchell
- Lehigh University
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Jonathan Poplawsky
- Oakridge National Lab
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Volkmar Dierolf
- Lehigh University
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The origin of the high hole density in In$_{\mathrm{x}}$Ga$_{\mathrm{1-x}}$N:Mg
ORAL
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Authors
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William Willoughby
- University of Alabama at Birmingham
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Mary Ellen Zvanut
- Co-author / Advisor
- University of Alabama at Birmingham
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Stability and electronic structure of Mg dopants in InGaN alloys
ORAL
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Authors
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Ji-Sang Park
- Department of Physics, Korea Advanced Institute of Science and Technology
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K.J. Chang
- Department of Physics, Korea Advanced Institute of Science and Technology
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How localized acceptors limit $p$-type conductivity in GaN
COFFEE_KLATCH · Invited
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Authors
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John L. Lyons
- Materials Department, University of California, Santa Barbara
- University of California at Santa Barbara
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Role of self-trapping in luminescence and $p$-type conductivity of wide-band-gap oxides
ORAL
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Authors
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Joel Varley
- Materials Department, University of California Santa Barbara
- Stanford University
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Anderson Janotti
- Materials Department, University of California Santa Barbara
- University of California, Santa Barbara Materials Department
- University of California Santa Barbara
- University of California, Santa Barbara
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Cesare Franchini
- University of Vienna and Center for Computational Materials Science
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Chris Van de Walle
- University of California at Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California Santa Barbara
- University of California, Santa Barbara
- University of California, Santa Barbara Materials Department
- University of California Santa Barbara
- Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA
- Materials Department, University of California at Santa Barbara
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Carbon Defect Complex as a Source of Yellow Luminescence in GaN
ORAL
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Authors
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Denis Demchenko
- Virginia Commonwealth University
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Mikhail Reshchikov
- Virginia Commonwealth University
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Identification of the defect responsible for current collapse in GaN/AlGaN HEMTs
ORAL
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Authors
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Yevgeniy Puzyrev
- Vanderbilt University
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Xiao Shen
- Vanderbilt University
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Sokrates Pantelides
- Dept. of Phys. and Astr., Vanderbilt University
- Vanderbilt University
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Fe charge state kinetics in semi-insulating Fe-doped GaN
ORAL
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Authors
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Ustun Sunay
- Author/ presenter
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Jamiyanaa Dashdorj
- Author/ Co-author
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Mary Ellen Zvanut
- Co-author / Advisor
- University of Alabama at Birmingham
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Kevin Udwary
- Co-author/ grew samples
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Jacob Leach
- Kyma Technologies
- Co-author/ grew samples
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ABSTRACT WITHDRAWN
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Nonradiative carrier capture rates at defects from first-principles calculations
ORAL
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Authors
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Qimin Yan
- University of California at Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA
- Materials Department, University of California at Santa Barbara
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Audrius Alkauskas
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California at Santa Barbara
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Chris Van de Walle
- University of California at Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California Santa Barbara
- University of California, Santa Barbara
- University of California, Santa Barbara Materials Department
- University of California Santa Barbara
- Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA
- Materials Department, University of California at Santa Barbara
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Optical properties of Ga$_{1-x}$Mn$_x$As from large scale ab initio calculations
ORAL
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Authors
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J. Jackson
- Max-Planck-Institut f\"{u}r Festk\"{o}rperforschung, Heisenbergstra{\ss}e 1, 70569 Stuttgart, Germany.
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R. Cardenas
- Max-Planck-Institut f\"{u}r Festk\"{o}rperforschung, Heisenbergstra{\ss}e 1, 70569 Stuttgart, Germany.
- Max-Planck-Institut f\"ur Festk\"orperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
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Gabriel Bester
- Max-Planck-Institut f\"{u}r Festk\"{o}rperforschung, Heisenbergstra{\ss}e 1, 70569 Stuttgart, Germany
- Max-Planck-Institute for Solid State Research, Stuttgart
- Max-Planck-Institut f\"{u}r Festk\"{o}rperforschung, Heisenbergstra{\ss}e 1, 70569 Stuttgart, Germany.
- Max-Planck-Institut f\"ur Festk\"orperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
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Impact of gamma-irradiation on the properties of n-type AlGaN/GaN heterostructures
ORAL
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Authors
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Elena Flitsiyan
- University of Central Florida
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Leonid Chernyak
- University of Central Florida
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Electronic band structure, doping, and defects in the semiconducting Half Heusler compound CoTiSb
ORAL
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Authors
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Jason Kawasaki
- University of California Santa Barbara
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Linda Johansson
- Lund University
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Martin Hjort
- Lund University
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Rainer Timm
- Lund University
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Brian Schultz
- University of California Santa Barbara
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Thiagarajan Balasubramanian
- Lund University
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Anders Mikkelsen
- Lund University
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Chris Palmstrom
- University of California Santa Barbara
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