Electric transport in Individual GaAs nanowires

ORAL

Abstract

We report electrical transport measurements on individual GaAs nanowires approximately 50 nm in diameter contacted via lithographically patterned Al/Ti metal films. The nonlinear current-voltage characteristics show a strongly hysteretic behavior sensitive to the device temperature and the biasing history. In hysteresis-free regimes, we compare the data to a model based on two metal-semiconductor barriers in series with the wire, and find a good overall agreement. We also discuss the effects of surface treatments on the metal-wire interface resistance. The work is supported by NSF grant DMR-1206784 and DMR-0804199 and University of Cincinnati.

–

Authors

  • Zhuting Sun

    • University of Cincinnati

  • Andrei Kogan

    • University of Cincinnati

  • Tim Burgess

    • Department of Electronic and Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia
    • Dep. of Electronic Materials Engineering, Australian National University, Australia, Canberra, ACT, Australia
    • Australian National University

  • Chenupati Jagadish

    • Department of Electronic and Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia
    • Australian National University, Canberra, Australia
    • Australian National University
    • Dep. of Electronic Materials Engineering, Australian National University, Australia, Canberra, ACT, Australia