The Effect of Doping on the Metal-Semiconductor Transition in VO$_{2}$

ORAL

Abstract

Vanadium dioxide (VO$_{2})$ is a well-known correlated material that exhibits a metal-semiconductor transition at 340K, with several orders of magnitude change in the resistivity. In this study, we report the effect of Mn-doping and Al-doping, with different doping recipes; the films were deposited by Reactive Biased Target Ion Beam Deposition, and their single phase was confirmed by X-ray diffractometry. The different doping recipes had a very dramatic impact on the crystallinity of the vanadium dioxide films. It was found that using a lower frequency for the pulsed dc target bias was desirable for the improvement of the film quality. Both Al and Mn doping can enhance the transition; while the Al doped VO$_{2}$ also raises the transition temperature.

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Authors

  • Salinporn Kittiwatanakul

    • University of Virginia
    • Department of Physics, University of Virginia

  • Stuart Wolf

    • University of Virginia
    • Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904
    • University of Virginia, Dept. of Materials Science and Engineering
    • Department of Physics, University of Virginia

  • Jiwei Lu

    • University of Virginia
    • Department of Materials Science and Engineering, University of Virginia