Controlling the density of electrons in the 2DEG at complex oxide interfaces
ORAL
Abstract
The formation of a two-dimensional electron gas (2DEG) at the interface between two insulators, SrTiO$_{\mathrm{3\thinspace }}$(STO) and LaAlO$_{\mathrm{3}}$ (LAO), has sparked huge interest in oxide electronics. In spite of almost a decade of research, the mechanisms that determine the density of this 2DEG have not yet been unravelled. The polar discontinuity at the STO/LAO interface can in principle sustain an electron density of 3.3x10$^{\mathrm{14\thinspace }}$cm$^{\mathrm{-2\thinspace }}$(0.5 electrons per unit cell). However, experimentally observed densities are more than an order of magnitude lower. Using a combination of first-principles and Schr\"{o}dinger-Poisson simulations we investigate the origin of the electrons in the 2DEG at the STO/LAO interface. We analyze the asymmetric nature of the heterostructures, i.e., the inability to form a second LAO/STO interface that is a mirror image of the first, and the effects of passivation of the LAO surface. Our results apply to oxide interfaces in general, and explain why the SrTiO$_{\mathrm{3}}$/GdTiO$_{\mathrm{3\thinspace }}$interface has been found to exhibit the full density of 0.5 electrons per unit cell.
*This work has been supported by the ARO and NSF.
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