Photoemission on highly-ordered arrays of structured epitaxial graphene

We use the recently-demonstrated method of growing pre-patterned epitaxial graphene directly from structured silicon carbide (SiC) to produce dense, highly-ordered arrays of graphene nanoribbons suitable for macroscopic characterization methods. Specifically, we use angle-resolved photoemission spectroscopy (ARPES) to observe the ensemble-averaged band structure of nanoribbons with nominal widths of 10nm and 30nm. A Dirac-like cone is visible down to 10nm and, although the graphene is a single layer, it is undoped, in contrast to single layer graphene nanoribbons on either the Si- or C-terminated faces of SiC.