Toward graphene based electronics from homogeneous top-gated graphene devices

We report high quality top-gated graphene field effect devices integrated on 150mm substrate, which involves unprecedented homogeneous chemical vapor deposition growth of monolayer graphene on Ni/Cu. Statistics of maximum resistance, dirac voltage and also mobility over a thousand devices are shown for the first time, in which 5\% of measurable devices are in 3,000$\sim$5,000 cm2/V$\cdot$s of mobility. Furthermore, logic gates such as NOT and AND based on top-gated graphene devices were demonstrated. Our results imply a route toward graphene based electronics with complementary metal-oxide-semiconductor (CMOS) compatible process.