Field-induced negative differential spin lifetime in silicon

Using experimental measurements of spin transport in undoped silicon, we show that the electric field-induced thermal asymmetry between the electron and lattice systems substantially impacts the identity of the dominant spin relaxation mechanism. In contrast to the Elliott-Yafet theory where intraband phonon absorption leads to spin relaxation, here we induce phonon \emph{emission} during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where reduction of the transit time between spin-injector and spin-detector with larger electric field is accompanied by a counterintuitive reduction in spin polarization and an apparent \emph{negative} spin lifetime.\\[4pt] Work at UMD is supported by the Office of Naval Research and the National Science Foundation. We acknowledge the support of the Center for Nanophysics and Advanced Materials and Maryland NanoCenter and its FabLab. Work at UR is supported by AFOSR and NSF (No. FA9550-09-1-0493 and No. DMR 1124601).