Ultra-thin body poly(3-hexylthiophene) transistors with improved short-channel performance

ORAL

Abstract

The microstructure and charge transport properties of binary blend of regioregiolar (rr) and regiorandom(RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction study shows vertical phase separation in the blend films, with rr-P3HT crystallized at the semiconductor/dielectric interface. These thin film transistors with layered structure preserve high field effect mobility when rr-P3HTcontents are reduced to as low as 5.6{\%} where the channel thickness is only a few nanometers. As a result of this ultra-thin active layer at interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high performance, small size and reliable electronic devices.

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Authors

  • Chenchen Wang

    • Applied Physics, Stanford University

  • Jonathan Rivnay

    • Department of Materials Science and Engineering, Stanford Univerity

  • Scott Himmelberger

    • Department of Materials Science and Engineering, Stanford Univerity

  • Kiarash Vakhshouri

    • Department of Chemical Engineering, The Pennsylvania State University

  • Enrique D. Gomez

    • Department of Chemical Engineering, The Pennsylvania State University

  • Alberto Salleo

    • Department of Materials Science and Engineering, Stanford Univerity
    • Stanford University