Divergence of the effective mass in a strongly-interacting 2D electron system

ORAL

Abstract

The diffusion thermopower in a low-disorder, strongly-interacting 2D electron system in silicon increases with decreasing electron density and tends to infinity at a finite density $n_t$. Comparison with earlier data for a high-disorder silicon system indicates that the critical density $n_t$ does not depend on the degree of disorder. The increase of the thermopower is associated with a diverging electron mass in the close vicinity of an interaction-induced phase transition.

*Work supported by DOE Grant DE-FG02-84ER45153, BSF grant \#2006375, RFBR, RAS, and the Russian Ministry of Sciences.

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Authors

  • Shiqi Li

    • City College of New York, New York, NY 10031; Graduate Center of CUNY, New York, NY 10016

  • Anish Mokashi

    • Northeastern University, Boston, MA 02115

  • Bo Wen

    • City College of New York, New York, NY 10031

  • S.V. Kravchenko

    • Northeastern University, Boston, MA 02115

  • A.A. Shashkin

    • Institute of Solid State Physics, Chernogolovka, Moscow District 142432

  • V.T. Dolgopolov

    • Institute of Solid State Physics, Chernogolovka, Moscow District 142432

  • M.P. Sarachik

    • City College of New York, New York, NY 10031