Scaling of the anomalous Hall effect in SrRuO$_{3}$
ORAL
Abstract
Being one of the most intriguing manifestations of a transport phenomenon that is sensitive to spin and topology, the anomalous Hall effect (AHE) is at the focus of considerable theoretical and experimental efforts. SrRuO$_{3}$ has played a pivotal role in the study of the AHE and numerous attempts have been made to elucidate its complicated behavior. By using SrRuO$_{3}$ films with a wide range of thicknesses that vary considerably in the temperature-dependence of their resistivity, we show that the AHE scales with resistivity. The scaling provides a compelling piece of evidence that resistivity, \emph{irrespective of its sources or nature (elastic or inelastic)}, determines the AHE of SrRuO$_{3}$ in the entire ferromagnetic phase. This observation strongly suggests that changes in Berry phase due to assumed temperature-dependent exchange splitting cannot explain the complicated temperature dependence of the AHE. On the other hand side jumps mechanism combined with Karplus-Luttinger (Berry phase) mechanism that takes into account effects of finite scattering time may explain the observed behavior.
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