Electronic structure of the indium-adsorbed Au/Si(111)-$\sqrt{3}\times\sqrt{3}$ surface: a first-principles study

ORAL

Abstract

Electronic structures of the indium-adsorbed Au/Si(111)-$\sqrt{3}\times\sqrt{3}$ surface were examined using first-principles calculations at In coverages range from 0.15 ML to 1 ML. The band structures of the various proposed models were analyzed in detail. Our results show that the calculated bands for the identified atomic models for indium-adsorbed on conjugate honeycomb-chained-trimer model at In coverages of 1/3 ML and 2/3 ML are in agreement with the identified bands in the angle-resolved photoemission study [Phys. Rev. B \textbf{80} 075312 (2009)].

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Authors

  • Feng-Chuan Chuang

    • Department of Physics, National Sun Yat-sen University, Taiwan

  • Chia-Hsiu Hsu

    • Department of Physics, National Sun Yat-sen University, Taiwan

  • Wen-Huan Lin

    • Department of Physics, National Sun Yat-sen University, Taiwan

  • Vidvuds Ozolins

    • Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095-1595, USA