Coherence in a transmon qubit with epitaxial tunnel junctions

ORAL

Abstract

We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time $T_1$ is $.72-.86\;\rm{\mu sec}$ and the ensemble dephasing time $T_2^*$ is slightly larger than $T_1$. The dephasing time $T_2$ ($1.36\;\rm{\mu sec}$) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

Authors

  • Martin Weides

    • National Institute of Standards and Technology, Boulder, CO 80309-044, USA
    • National Institute of Standards and Technology
  • Jeffrey Kline

    • National Institute of Standards and Technology
  • Michael Vissers

    • National Institute of Standards and Technology, Boulder, CO
    • National Institute of Standards and Technology
  • Martin Sandberg

    • National institute of Standards and Technology, Boulder, CO 80305
    • National Institute of Standards and Technology
  • David Wisbey

    • Saint Louis University
  • David Pappas

    • National Institute of Standards and Technology
  • Blake R. Johnson

    • Raytheon BBN Technologies
    • Disruptive Information Processing Technologies Group, Raytheon BBN Technologies
  • T. Ohki

    • Raytheon BBN Technologies
    • Disruptive Information Processing Technologies Group, Raytheon BBN Technologies