Strong negative magnetoresistance in high-mobility 2D electron systems

ORAL

Abstract

This talk reports on a remarkably strong negative magnetoresistance effect in high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at about 1 kG where a deep and strongly temperature dependent minimum is observed. At low temperature, the resistivity at this minimum is a small fraction of the zero field resistivity. The talk will discuss the effects of temperature and in-plane magnetic field on this negative magnetoresistance and compare experimental findings with existing theories. A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by NSF Cooperative Agreement No. DMR-0654118, by the State of Florida, and by the DOE and at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. The work at Minnesota was supported by the NSF Grant No. DMR-0548014 and by the DOE Grant No. DE-SC002567. The work at Princeton was partially funded by the Gordon and Betty Moore Foundation and the NSF MRSEC Program through the Princeton Center for Complex Materials (DMR-0819860) and the work at Sandia was supported by the Sandia Corporation under Contract No. DE-AC04-94AL85000. Sandia National Laboratories is a multi-program laboratory managed.

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Authors

  • Michael Zudov

    • University of Minnesota
    • School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, USA

  • Anthony Hatke

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, USA

  • John Reno

    • Sandia National Laboratories, Albuquerque, NM 87185, USA

  • Loren Pfeiffer

    • Princeton University, Department of Electrical Engineering, Princeton, NJ 08544, USA

  • Ken West

    • Princeton University, Department of Electrical Engineering, Princeton, NJ 08544, USA