Magneto-transport studies of hydrogenated graphene
ORAL
Abstract
We study the magnetoresistance of hydrogenated graphene devices on a SiO$_{2}$ substrate. A large negative magnetoresistance of up to 30{\%} in a field of 2.5T is observed at low temperatures and at the film's charge neutrality point without any sign of saturation. A detailed analysis of the gate voltage dependence demonstrates a suppression of the large, negative magnetoresistance, which appears to be driven by a crossover from strong localization at low carrier concentrations to weak localization at higher carrier concentrations. Evidence of electron-hole symmetry breaking is found in the magnetic field traces at low temperature.
*B. Matis performed this work courtesy of an National Research Council postdoctoral Fellowship. This work was supported by the Office of Naval Research.
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