Electrical Transport Properties of Bi$_{2}$Te$_{3}$ Nanotubes and Nanowires
ORAL
Abstract
Electrical transport properties of promising topological insulator, Bi$_{2}$Te$_{3}$ nanowires and nanotubes are measured at different temperatures and magnetic field and the results are compared with the Bi$_{2}$Se$_{3}$ thin films. The nanotube and nanowire samples are synthesized by galvanostatic electrodepositon and solution phase methods, with diameters of 70nm (ex) and 50nm (in) for nanotubes and 80$\sim $100nm for nanowires, respectively. The contact leads (Pt) are fabricated by using Focusing Ion Beam (FIB). The magnetoresistance of Bi$_{2}$Te$_{3}$ nanotubes shows linear dependence as a function of magnetic field, with a notable peak around zero field. This is different from Bi$_{2}$Se$_{3}$ thin films which show quadratic behavior, with a significant dip near zero field. The results will be discussed based on the possible weak localization effect in the nanotubes in comparison with the weak anti-localization effect in the films.
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Authors
Renzhong Du
Department of Physics, The Pennsylvania State University, University Park, PA, USA
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
The Pennsylvania State University
Jian Wang
Department of Physics, The Pennsylvania State University, University Park, PA, USA
Pennsylvania State University
Center for Nanoscale Science and Materials Research Institute, Penn State University, University Park PA 16802
Qi Li
Department of Physics, The Pennsylvania State University, University Park, PA, USA
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
The Pennsylvania State University
Yuewei Yin
Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, China
Department of Physics, Pennsylvania State University, University Park, PA 16802, USA
Sining Dong
Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, China
Xiaoguang Li
Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, China