Mapping the band profile across the Gd$_{2}$O$_{3}$/GaAs(100) hetero-interface by using scanning tunneling microscopy

ORAL

Abstract

Direct measurements of atomic-scale electronic structure at nm-thick epitaxial Gd$_{2}$O$_{3}$ gate oxides on GaAs have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. Both scanning tunneling spectroscopy and analysis of the local electronic states across the gate oxides suggest the Ga-O terminated hetero-interface. In addition, along with the theoretical modeling, the band offsets for both conduction and valence states are identified. A unique combination of STM and STS successfully provides direct information on the interfacial band profile and band offsets across the model high-$\kappa$/III-V system in the work.

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Authors

  • B.C. Huang

    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

  • Y.P. Chiu

    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

  • M.C. Shih

    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

  • J.Y. Shen

    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan

  • P. Chang

    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan

  • C.S. Chang

    • Institute of Physics, Academia Sinica, Taipei, 10617, Taiwan

  • M.L. Huang

    • Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan

  • M.H. Tsai

    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

  • M. Hong

    • Department of Physics and Graduate Institute of Applied Physics, National Taiwan University, Taipei, 10617, Taiwan

  • J. Kwo

    • Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan