Characterization of Few Layer Graphene films Grown on Cu, Cu-Ni and SiC Substrates

The electronic structure of graphene depends on the number of graphene layers and the stacking sequence between the layers. Therefore, it is important to have a non-destructive technique for analyzing the overlayer coverage of graphene directly on the growth substrate. We have developed a technique using angle-resolved XPS to determine the average graphene thickness directly on metal foil substrates and SiC substrates. Since monolayer graphene films can be grown on Cu substrates, these samples are used as a standard reference for a monolayer of graphene. HOPG is used as a standard reference for bulk graphite. The electron mean free path of the C-1s photoelectron can be determined by analyzing the areas under the C-1s peaks of monolayer graphene/Cu and bulk graphite. With the electron mean free path, the graphene coverage of a film of arbitrary thickness can be determined by analyzing the area under the C-1s of that sample. Analysis of graphene coverages for graphene films grown on Cu-Ni substrates and of the thickness of both the graphene overlayer and intermediate buffer layer on SiC will be presented.