JV Annealing Study of P3HT:PCBM OPV
POSTER
Abstract
Current-voltage (JV) analysis of poly (3-hexlythiophene) (P3HT) and phenyl-C61-butaric acid methyl ester (PCBM) organic photovoltaics (OPV) yield valuable insight into the internal physics of devices. A simple lumped circuit model, previously used to analyze various thin film photovoltaics and more recently applied to OPV has been used to study annealing parameters. An annealing study of P3HT:PCBM blend OPV was carried out using the lumped circuit model. Limiting carrier lifetime-mobility product information and barrier data were extracted from the JV analysis of these devices. Collection loss characteristics were also obtained. The data was used to better characterize annealing effects.