AFM and SThM Characterization of Graphene

POSTER

Abstract

We report on detailed characterization of epitaxial grown graphene on SiC and chemical vapor deposition grown graphene on Cu foil using atomic force microscopy (AFM) and scanning thermal microscopy (SThM). We focus on the electronic and thermal properties of graphene grain boundaries, and thus providing valuable feedback to materials growth. Specifically, we perform thermal conductivity contrast mapping and surface potential mapping of graphene, and compare with that obtained on the Au electrodes and the substrate.

Authors

  • Christopher Foy

    • Georgia Inst of Tech
  • Anton Sidorov

    • Georgia Inst of Tech
  • Xunchi Chen

    • Georgia Inst of Tech
  • Ming Ruan

    • Georgia Inst of Tech
  • Claire Berger

    • Georgia Inst of Tech
  • Walter de Heer

    • Georgia Inst of Tech
  • Zhigang Jiang

    • Georgia Inst of Tech