Titanium Isopropoxide Precursor Volume Consumption as a Function of Temperature for Titanium Dioxide Thin Films Grown by Atomic Layer Deposition

Atomic layer deposition (ALD) offers tremendous opportunities for controlling material synthesis on an atomic level and for creating nanolayers with unique new functionalities. ALD is a chemical gas phase thin film deposition method based on alternating surface reactions that employs two or more precursors. ALD is often used for growth of high k dielectric constant oxide films. Titanium dioxide material have a k value of 80, and a band gap of $\sim $ 3 eV, and due to strong oxidizing properties thin films coated on construction materials and glass have fog proof, and self cleaning properties. Our ALD reactor employs liquid Titanium Isopropoxide [Ti{\{}OCH(CH$_{3})_{2}${\}}$_{4}$] as a metal precursor and distilled H$_{2}$O as an oxygen source to grow thin films of titanium dioxide [TiO$_{2}$] on silicon [Si], gallium nitride [GaN], and Aluminium foil [Al-foil] substrates. Titanium Isopropoxide exhibit a vapor pressure surge above 40$^{\circ}$ C and we report the volume precursor consumption as a function of precursor temperature and thin film thickness for ALD grown TiO$_{2 }$on Si, GaN, and Al-foil substrates. We will also present dielectric constants of the TiO$_{2}$ thin films measured with a variable angle spectroscopic ellipsometer.