Spectral and Spatial Response of Sulfur-Hyperdoped n+/p Silicon Photodiodes

ORAL

Abstract

Pulsed laser melting of implanted silicon can enable doping well above equilibrium concentrations. Sulfur doping leads to a deep donor state that may form an impurity band at high enough concentrations. Photodiodes formed from sulfur-hyperdoped n+ layers on a p-type wafer have shown external quantum efficiency of much greater than 100\%, as well as enhanced infrared response. In this paper we report on optoelectronic characterization of diodes prepared by implantation of 10$^{15}-10^{16}$ sulfur/cm2 into a p-type wafer, followed by nanosecond pulsed laser melting and recrystallization. Experimental results from wavelength-dependent diode response, spatial quantum efficiency mapping, intensity dependent efficiency, and current-voltage techniques will be reported. We will also discuss potential models for the observed behavior.

*Research at Rensselaer was supported by the Army Research Office. Research at Harvard was supported by the US Army ARDEC. D.R. was supported in part by a National Defense Science and Engineering Graduate fellowship.

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Authors

  • David Hutchinson

    • Rensselaer Polytechnic Institute

  • Daniel Recht

    • Harvard University
    • Harvard School of Engineering and Applied Sciences

  • Joseph Sullivan

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Jeffrey Warrender

    • US Army - ARDEC, Benet Laboratories

  • Michael Aziz

    • Harvard University

  • Tonio Buonassisi

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Peter Persans

    • Rensselaer Polytechnic Institute