A study of epitaxial graphene/SiC(0001) functionalized by nitrogen doping

ORAL

Abstract

In this work, we have carried out nitridation of epitaxial graphene/SiC(0001) using N$_{2}$ plasma. The effects of processing conditions on the structure of graphene have been investigated by x-ray photoemission spectroscopy and Raman spectroscopy, and changes in the electronic structures of the nitrogen-doped graphene have been studied using scanning tunneling microscopy. We find that the exposure of epitaxial graphene to nitrogen plasma not only leads to N incorporation, but also creates carbon vacancies, resulting in the formation of N-vacancy complexes.

*Supported by DOE (DE-FG02-05ER46228)

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Authors

  • S. Rajput

    • Department of Physics, University of Wisconsin, Milwaukee, WI 53211

  • Y. Liu

    • Department of Physics, University of Wisconsin, Milwaukee, WI 53211

  • H. Yu

    • Department of Chemical and Biomolecualr Engineering, University of California, Los Angeles, CA 90095

  • R. F. Hicks

    • Department of Chemical and Biomolecualr Engineering, University of California, Los Angeles, CA 90095

  • L. Li

    • Department of Physics, University of Wisconsin, Milwaukee, WI 53211