Writing Graphene Nanoribbons on SiC by Selective Graphitization

ORAL

Abstract

We describe a new technique for selective graphene growth onto 4H- and 6H-SiC by ion implan- tation. The presented technique is as easy as patterning (ion implanting) regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T$_{G})$ of SiC. We find that ion implantation of SiC lowers the T$_{G}$ of SiC, allowing selective graphene growth at temperatures below the T$_{G}$ of pristine SiC and above T$_{G}$ of implanted SiC. Presented results provide a new technique to pattern device structures ranging from nanometers to microns in size without using conventional lithography and chemical processing.

*National Science Foundation and Office of Naval Research

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Authors

  • Sefaattin Tongay

    • Department of Material Science and Engineering, University of Florida
    • Dr.

  • Max Lemaitre

    • Department of Material Science and Engineering, University of Florida

  • Joel Fridmann

    • Raith USA Inc., Ronkonkoma, New York

  • Arthur F. Hebard

    • Department of Physics, University of Florida
    • Department of Physics, University of Florida, Gainesville, FL 32611 USA
    • Department of Physics, University of Florida, Gainesville, FL 32611
    • University of Florida
    • Prof. Dr.

  • Brent Gila

    • Department of Material Science and Engineering, University of Florida

  • Bill R. Appleton

    • Department of Material Science and Engineering, University of Florida