Fabrication and Characterization of Si MOS-Based Triple Quantum Dot Devices

We have fabricated electrostatically defined, few electron triple quantum dot (TQD) devices in a silicon metal-oxide-semiconductor structure. The devices show good electrical stability and gate controllability. We have obtained charge stability diagrams for identifying the charging states of the TQD. In this talk, we will describe the technical challenges in the TQD fabrication and present the experimental results of tuning three dots into a resonance. We will also discuss the prospect of these devices to encode a spin qubit that uses exchange interaction alon and possible ways to perform coherent manipulations within the tunable range of inter-dot tunneling of these devices. The work is supported by ARO.